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  june 2010 doc id 15847 rev 2 1/16 16 stgd10nc60sd STGF10NC60SD 10 a, 600 v fast igbt features optimized performance for medium operating frequencies up to 5 khz in hard switching low on-voltage drop (v ce(sat) ) very soft ultra fast antiparallel diode application motor drive description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram dpak to-220fp 1 2 3 1 3 tab table 1. device summary order codes marking package packaging stgd10nc60sdt4 gd10nc60sd dpak tape and reel STGF10NC60SD gf10nc60sd to-220fp tube www.st.com
contents stgd10nc60sd, STGF10NC60SD 2/16 doc id 15847 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
stgd10nc60sd, STGF10NC60SD electrical ratings doc id 15847 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25c 18 10 a i c (1) continuous collector current at t c = 100c 10 5 a i cl (2) 2. v clamp = 80%,(v ces ), t j =150 c, r g = 10 ? , v ge = 15 v. turn-off latching current 14 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa. pulsed collector current 25 a i f diode rms forward current at t c =25 c 10 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 20 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 60 25 w v iso isolation withstand voltage (rms) from all three leads to external heat sink (t = 1 sec; t c = 25 c) 2500 v t j operating junction temperature -55 to 150 c table 3. thermal data symbol parameter value unit dpak to-220fp r thj-case thermal resistance junction-case igbt 2.08 5 c/w thermal resistance junction-case diode 4.5 c/w r thj-amb thermal resistance junction-ambient 100 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
electrical characteristics stgd10nc60sd, STGF10NC60SD 4/16 doc id 15847 rev 2 2 electrical characteristics (t j =25c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 5 a v ge = 15 v, i c = 5 a, t j = 125 c 1.45 1.45 1.65 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v i ces collector cut-off current (v ge =0) v ce = 600 v v ce =600 v, t j =125 c 150 1 a ma i ges gate-emitter leakage (v ce =0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 5 a 3.5 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 365 44 8 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 5 a, v ge = 15 v figure 18 - 18 8 3.5 - nc nc nc
stgd10nc60sd, STGF10NC60SD electrical characteristics doc id 15847 rev 2 5/16 table 6. switching on/off (inductive load) symbol parameter test cond itions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 ? , v ge = 15 v, figure 19 - 19 4 1330 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 ? , v ge = 15 v, t j = 125c figure 19 - 18 4.5 1000 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r g = 10 ? , v ge = 15 v, figure 19 - 100 160 205 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r g = 10 ? , v ge = 15 v, t j = 125c figure 19 - 165 250 310 - ns ns ns table 7. switching energy (inductive load) symbol parameter test cond itions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typical diode is used in the test circuit in figure 17 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature. 2. turn-off losses included also include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 5 a r g = 10 ? , v ge = 15 v, figure 17 - 60 340 400 - j j j eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 5 a r g = 10 ? , v ge = 15 v, t j = 125c figure 17 - 90 540 630 - j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f =5 a i f =5 a, t j =125 c - 2 1.65 2.45 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =5 a, v r =40 v, di/dt=100 a/s figure 20 - 22 14 1.3 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =5 a, v r =40 v, t j =125 c, di/dt=100 a/s figure 20 - 34 35 2.1 ns nc a
electrical characteristics stgd10nc60sd, STGF10NC60SD 6/16 doc id 15847 rev 2 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. collector-emitter on voltage vs collector current figure 5. collector-emitter on voltage vs temperature figure 6. normalized breakdown voltage vs temperature figure 7. normalized gate threshold vs temperature 0 5 10 15 20 25 3 0 0246 8 10 v ce (v) i c (a) v ge = 7 v v ge = 8 v v ge = 9 v v ge = 10 v v ge = 11 v v ge = 15 v am07262v1 0 5 10 15 20 25 3 0 0246 8 10 12 v ge (v) i c (a) v ce = 10 v am0726 3 v1 0.5 1 1.5 2 2.5 3 04 8 12 16 20 v ce( sa t) (v) i c (a) t j = -50 oc t j = 25 oc t j = 150 oc v ge = 15 v am07264v1 1 1.2 1.4 1.6 1. 8 2 -50 0 50 100 v ce( sa t) (v) t j (oc) i c = 10 a i c = 2.5 a i c = 5 a v ge = 15 v am0 8 265v1 0.9 0.95 1 1.05 1.1 1.15 -50 0 50 100 150 v ce s (norm) t j (oc) i c = 1 ma am07266v1 0.6 0.7 0. 8 0.9 1 1.1 -50 0 50 100 v ge(th) (norm) t j (c) v ge = v ce i c = 250 a am07267v1
stgd10nc60sd, STGF10NC60SD electrical characteristics doc id 15847 rev 2 7/16 figure 8. capacitance variations figure 9. gate charge vs gate-emitter voltage figure 10. switching losses vs temperature figure 11. switching losses vs gate resistance figure 12. switching losses vs collector current figure 13. diode forward on voltage 0 200 400 600 01020 3 040 c (pf) v ce f = 1 mhz v ge = 0 c ie s c oe s c re s am07269v1 0 4 8 12 16 20 04 8 12 16 v ge (v) q g (nc) v cc = 4 8 0 v i c = 5 a am0726 8 v1 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 2 5 5 0 7 5 1 0 0 e ( j ) t j ( c ) v c c = 4 8 0 v , v g e = 1 5 v i c = 5 a , r g = 1 0 ? e o n e o f f am07270v1 0 100 200 3 00 400 500 600 040 8 0 120 160 200 e ( j) r g ( ? ) v cc = 4 8 0 v, v ge = 15 v i c = 5 a, t j = 125 c e on e off am07271v1 0 100 200 3 00 400 500 12 3 4 e ( j) i c (a) v cc = 4 8 0 v, v ge = 15 v r g =10 ? , t j = 125 c e on e off am07272v1                  ) ! &- 6 6 &- 4 ?# maximumvalues j 4 ?# m aximumvalues j 4 ?# typicalvalues j
electrical characteristics stgd10nc60sd, STGF10NC60SD 8/16 doc id 15847 rev 2 figure 14. thermal impedance for dpak figure 15. thermal impedance for to-220fp figure 16. turn-off soa        3inglepulse     +           t p s  u y [ k [ y u " ym ? 7 " p ym/ah k        3inglepulse     +           t p s  u y [ k [ y u " ym ? 7 " p ym/ah k   i c 10 1 0.1 0.01 0.1 1 100 v ce (v) 10 (a) am0727 3 v1
stgd10nc60sd, STGF10NC60SD test circuits doc id 15847 rev 2 9/16 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveforms figure 20. diode recovery time waveform
package mechanical data stgd10nc60sd, STGF10NC60SD 10/16 doc id 15847 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stgd10nc60sd, STGF10NC60SD package mechanical data doc id 15847 rev 2 11/16 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
package mechanical data stgd10nc60sd, STGF10NC60SD 12/16 doc id 15847 rev 2 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stgd10nc60sd, STGF10NC60SD package mechanical data doc id 15847 rev 2 13/16 figure 21. to-220fp drawing 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
packaging mechanical data stgd10nc60sd, STGF10NC60SD 14/16 doc id 15847 rev 2 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
stgd10nc60sd, STGF10NC60SD revision history doc id 15847 rev 2 15/16 6 revision history table 10. document revision history date revision changes 06-jul-2009 1 initial release 14-jun-2010 2 inserted section 2.1: electrical characteristics (curves) .
stgd10nc60sd, STGF10NC60SD 16/16 doc id 15847 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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